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A Product Line of
Diodes Incorporated
ZXMP6A17DN8
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-60
?
?
?
?
?
?
-0.5
? 100
V
μA
nA
I D = -250μA, V GS = 0V
V DS = -60V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
?
?
4.7
-0.85
25.1
27.2
?
0.125
0.190
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -2.3A
V GS = -4.5V, I D = -1.9A
V DS = -15V, I D = -2.3A
I S = -2.0A, V GS = 0V
I S = -1.7A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C iss
?
637
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
C oss
C rss
Q g
Q g
?
?
??
?
70
53
9.0
17.7
?
?
??
?
pF
pF
nC
nC
V DS = -30V, V GS = 0V
f = 1MHz
V GS = -4.5V
V DS = -30V
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Q gs
Q gd
t D(on)
?
?
?
1.6
4.4
2.6
?
?
?
nC
nC
ns
V GS = -10V
I D = -2.2A
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
t r
t D(off)
t f
?
?
?
3.4
26.2
11.3
?
?
?
ns
ns
ns
V DD = -30V, V GS = -10V
I D = -1A, R G ? 6.0 ?
Notes:
12. Measured under pulsed conditions. Pulse width ? 300μs; duty cycle ? 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
4 of 8
www.diodes.com
August 2013
? Diodes Incorporated
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